FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 1 april 2013 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDD5N50NZF unit v dss drain to source voltage 500 v v gss gate to source voltage 25 v i d drain current - continuous (t c = 25 o c) 3.7 a - continuous (t c = 100 o c) 2.2 i dm drain current - pulsed (note 1) 14 a e as single pulsed avalanche energy (note 2) 165 mj i ar avalanche current (note 1) 3.3 a e ar repetitive avalanche energy (note 1) 6.25 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 62.5 w - derate above 25 o c0.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDD5N50NZF unit r ? jc thermal resistance, junction to case, max. 2 o c/w r ? ja thermal resistance, junction to ambient, max. 62.5 FDD5N50NZF n-channel unifet tm frfet ? mosfet ? 500 v, 3.7 a, 1.75 ? features ?r ds(on) = 1.47 ? (typ.) @ v gs = 10 v, i d = 1.85 a ? low gate charge (typ. 9n c) ?low c rss (typ. 4 pf) ? 100% avalanche tested ? improved dv/dt capability ? esd imoroved capability ?rohs compliant applications ? lcd/led/pdp tv ? lighting ? uninterruptible power supply description unifet tm ii mosfet is fairchild semiconductor ? ?s high volt- age mosfet family based on advanced planar stripe and dmos technology. this advanc ed mosfet family has the smallest on-state resistance among the planar mosfet, and also provides superior switching performance and higher ava- lanche energy strength. in addition, internal gate-source esd diode allows unifet ii mosfet to withstand over 2kv hbm surge stress. the body diode?s re verse recovery performance of unifet ii frfet ? mosfet has been enhanced by lifetime control. its t rr is less than 100nsec and the reverse dv/dt immu- nity is 15v/ns while normal pl anar mosfets have over 200nsec and 4.5v/nsec respectively. therefore, it can remove additional component and improve system reliab ility in certain applications in which the performance of mo sfet?s body diode is significant. this device family is suitable fo r switching power converter appli- cations such as power factor corr ection (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. g s d g s d g s d d-pak drain current limited by maximum junction temperature
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDD5N50NZF FDD5N50NZFtm d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t c = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 ? a v ds = 400v, v gs = 0v,t c = 125 o c - - 100 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 1.85a - 1.47 1.75 ? g fs forward transconductance v ds = 20v, i d = 1.85a - 4.2 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 365 485 pf c oss output capacitance - 50 65 pf c rss reverse transfer capacitance - 4 8 pf q g(tot) total gate charge at 10v v ds = 400v i d = 3.7a v gs = 10v (note 4) - 9 12 nc q gs gate to source gate charge - 2 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 250v, i d = 3.7a v gs = 10v, r gen = 25 ? (note 4) -1235ns t r turn-on rise time - 19 50 ns t d(off) turn-off delay time - 31 70 ns t f turn-off fall time - 22 55 ns i s maximum continuous drain to source diode forward current - - 3.7 a i sm maximum pulsed drain to source diode forward current - - 14 a v sd drain to source diode forward voltage v gs = 0v, i sd = 3.7a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 3.7a di f /dt = 100a/ ? s -87-ns q rr reverse recovery charge - 0.15 - ? c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 23mh, i as = 3.7a, v dd = 50v, r g = 25 ? , starting t j = 25 ? c 3. i sd ?? 3.7a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ? c 4. essentially independent of operating temperature typical characteristics
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.03 0.1 1 10 *notes: 1. 250 ? s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 25 345678 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.4 0.8 1.2 1.6 1 10 50 *notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0246810 1.2 1.6 2.0 2.4 2.8 3.2 3.6 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0246810 0 2 4 6 8 10 *note: i d = 3.3a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 0 200 400 600 800 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation vs. temperature figure 8. maximum safe operating area figure 9. maximum drain current vs. case temperature figure 10. transient thermal response curve -75 -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c ] ? jc (t) = 2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
FDD5N50NZF n-channel unifet tm ii frfet ? mosfet ?2009 fairchild semiconductor corporation FDD5N50NZF rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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